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The JANTX2N3810 is a silicon PNP dual bipolar junction transistor (BJT) manufactured by Microchip Technology. It utilizes a TO-78-6 through-hole package and operates within an extended temperature range of -65°C to +200°C. Key electrical specifications include a maximum DC collector current of 50 mA, with VCEO and VCBO ratings of 60 V each. The device features a VEBO of 5 V, a power dissipation capability of 350 mW, and a collector-emitter saturation voltage of 200 mV. DC current gain (hFE) ranges from a minimum of 100 at 10 uA/5 V to a maximum of 450 at 100 uA/5 V.
Verify the specific suffix designation against official Microchip documentation to confirm exact performance grades and testing standards. Ensure compatibility with existing TO-78-6 footprints during integration. Confirm that the procurement channel provides traceability required for regulated sectors. Validate component authenticity through authorized distribution networks to prevent counterfeit risks.
Select this component when a dual PNP configuration is required in a hermetic or ruggedized TO-78-6 package. Consider the 60 V voltage rating and 50 mA current limit for appropriate biasing. Evaluate the high-temperature operational range if the application exceeds standard commercial limits. Verify hFE requirements against the specified 100 to 450 gain range for signal amplification needs.
This part belongs to the 2N3810 series produced by Microchip Technology. It represents a specialized variant designed for robust performance in critical applications. The dual PNP structure distinguishes it from single-transistor alternatives within the same family.
Cross-reference with other manufacturers offering equivalent TO-78-6 dual PNP BJT packages. Verify pinout compatibility and ensure voltage/current ratings meet or exceed original specifications before substitution.