JANTX2N4150P

Single Bipolar Transistors Overview

The JANTX2N4150P is an NPN silicon power switching transistor manufactured by Microchip Technology. It operates within a junction temperature range of -65°C to +200°C and utilizes a TO-5 metal can package. Key electrical ratings include a collector-emitter voltage (VCEO) of 70 V, a collector-base voltage (VCBO) of 100 V, and an emitter-base voltage (VEBO) of 10 V. The device supports a maximum DC collector current of 10 A with a power dissipation rating of 1 W.

Single Bipolar Transistors Feature Summary

• Hermetically sealed construction for environmental protection
• High radiation hardness suitable for military applications
• Low saturation voltage for efficient power switching

Single Bipolar Transistors Applications

• Military-grade power switching circuits
• Radiation-hardened electronic systems
• High-reliability aerospace control units

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'P' against official Microchip documentation to confirm package or lead-free status. Confirm that the JAN class meets required radiation hardness levels. Validate datasheet revisions before final integration.

Single Bipolar Transistors Selection Notes

Select this component for high-power applications requiring robust radiation tolerance. Ensure thermal management accommodates the 1 W dissipation limit. Verify compatibility with TO-5 mounting requirements in the target assembly.

Single Bipolar Transistors Part Context

This part belongs to the 2N4150 family defined under MIL-PRF-19500/394P. It represents a low-power, high-voltage NPN transistor variant designed for harsh environments. The JAN quality level indicates compliance with strict military manufacturing standards.

Single Bipolar Transistors Replacement Considerations

Consult official substitution lists for equivalent MIL-PRF-19500/394P devices. Verify pinout compatibility with TO-5 packages. Ensure radiation hardness specifications match system requirements.