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The JANTX2N4957UB is a PNP bipolar junction transistor manufactured by Microchip Technology. It utilizes silicon technology and is housed in an SMD-3 surface-mount package. The device supports a collector-emitter voltage (VCEO) of 30 V and a collector-base voltage (VCBO) of 30 V, with an emitter-base voltage (VEBO) rating of 3 V. Maximum power dissipation is 200 mW. The continuous collector current is -30 mA. DC current gain (hFE) ranges from a minimum of 15 to a maximum of 165. Operating temperatures span from -65 °C to +200 °C.
Verify the specific suffix 'UB' against the official Microchip datasheet to confirm pinout and electrical tolerances. Ensure procurement channels are authorized to guarantee component authenticity and traceability for qualified applications. Confirm RoHS status as non-compliant if required by project specifications.
Select this component when a radiation-tolerant PNP transistor is required for surface-mount assembly. Verify that the 200 mW power dissipation limit accommodates the thermal design. Ensure the 30 V voltage ratings align with the circuit's maximum operating conditions. Check hFE requirements against the 15–165 range.
This part belongs to the JAN series of military-grade semiconductors produced by Microchip Technology. The JAN designation indicates compliance with military quality standards. The 2N4957 base model defines the core electrical characteristics, while the TXV suffix typically denotes enhanced screening or tolerance levels within the manufacturer's qualification hierarchy.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Microchip technical support for verified cross-references.