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The JANTX2N5796U is a dual small-signal PNP bipolar junction transistor manufactured by Microchip Technology. It features a silicon construction with a TO-78-6 package configuration. The device supports a maximum collector-emitter voltage of 60 V and a collector-base voltage of 60 V, with an emitter-base voltage rating of 5 V. Continuous collector current is rated at 600 mA, while power dissipation is limited to 600 mW. The component operates within a temperature range of -65°C to +175°C. DC current gain (hFE) ranges from a minimum of 40 to a maximum of 300 under specified test conditions.
Verify the specific suffix and revision level against the official Microchip datasheet to ensure compatibility with radiation hardness requirements. Confirm that the TO-78-6 package dimensions match the target footprint. Check for RoHS exemptions as military parts often differ from commercial standards. Validate supplier authorization to prevent counterfeit components in critical applications.
Select this component when a dual PNP topology is required in a hermetically sealed package. Compare power dissipation limits against thermal management capabilities. Ensure the 60V voltage ratings exceed circuit peak voltages. Consider the hFE spread for biasing stability. Verify that the manufacturing lot meets specific MIL-PRF-19500 quality levels if mandated by the system design.
This part belongs to the 2N5796 family of dual small-signal transistors. It shares electrical characteristics with commercial variants but includes enhanced screening and packaging for military use. The JANTX designation indicates a specific quality tier within the Microchip military product line, distinct from JAN or JANS levels.
JANTXV2N5796 offers tighter parameter tolerances. JANS2N5796 provides higher radiation hardness levels. Commercial equivalents like 2N5796 lack military screening. Verify pinout compatibility before substitution.