JANTXV2N2857

Overview

The JANTXV2N2857 is a silicon NPN RF bipolar junction transistor manufactured by Microchip Technology. It features a single configuration housed in the UB-3 surface-mount package. The device supports a maximum collector-emitter voltage of 15 V and a collector-base voltage of 30 V, with an emitter-base voltage rating of 3 V. It handles a continuous collector current of 40 mA and dissipates up to 200 mW of power. The component operates within a temperature range of -65°C to +200°C and specifies a minimum DC current gain (hFE) of 30.

Feature Summary

• Radiation-hardened design suitable for high-reliability environments
• Silicon NPN construction optimized for RF applications
• Extended operating temperature capability up to 200°C

Applications

• RF amplifier circuits
• High-reliability communication systems
• Military aerospace electronics

Procurement Notes

Verify the specific suffix designation, as the provided model lacks the trailing characters found in distributor listings. Confirm radiation hardness levels and datasheet revisions directly with the manufacturer. Ensure the UB-3 package footprint matches the target PCB layout before finalizing procurement orders.

Selection Notes

Select this component when an NPN RF transistor with radiation tolerance is required. Compare the 15 V voltage limit and 40 mA current capacity against circuit demands. Verify that the UB-3 package is compatible with assembly processes and that the thermal dissipation requirements fit the system constraints.

Part Context

This part belongs to the JANTXV series of radiation-hardened bipolar transistors produced by Microchip. These components are engineered for defense and space applications where standard commercial parts would fail due to ionizing radiation exposure. The series provides robust performance in harsh electromagnetic environments.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Microchip technical support for qualified alternatives or cross-reference options that meet the same radiation hardness and electrical specifications.