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The JANTXV2N2919U/TR is a dual small-signal NPN bipolar junction transistor manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-78-6 ceramic package designed for surface-mount installation. The device supports a collector-emitter voltage of 60 V, a collector-base voltage of 70 V, and an emitter-base voltage of 6 V. It handles a continuous collector current of 30 mA with a power dissipation rating of 350 mW. The component operates within a temperature range of -65°C to +200°C and features a DC current gain ranging from 175 to 600.
Verify that the specific ordering suffix matches the required military qualification level. Confirm the package type corresponds to the intended PCB layout constraints. Ensure the manufacturer source is authorized to prevent counterfeit components. Validate all electrical parameters against the official datasheet prior to integration into critical designs.
Select this component when a dual NPN configuration is required in a hermetic ceramic package. Consider the 350 mW power dissipation limit for thermal management strategies. Evaluate the 60 V collector-emitter voltage against circuit requirements. Verify compatibility with surface-mount assembly processes due to the TO-78-6 form factor.
This part belongs to the 2N2919 family of dual small-signal transistors produced by Microchip Technology. It serves as a specialized variant tailored for high-reliability applications where standard plastic packages are insufficient. The TO-78-6 package provides superior thermal and mechanical performance compared to conventional SMD alternatives.
JAN2N2919U/TR