JANTXV2N2920U/TR

Overview

The JANTXV2N2920U/TR is a single NPN silicon small-signal bipolar junction transistor manufactured by Microchip Technology. It utilizes a TO-78-6 hermetic package designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 60 V and a collector-base voltage of 70 V, with an emitter-base voltage rating of 6 V. Continuous collector current is limited to 30 mA, while power dissipation reaches 350 mW. The component operates within a temperature range of -65°C to +200°C. DC current gain (hFE) ranges from a minimum of 175 to a maximum of 600 at specified test conditions.

Feature Summary

• Hermetically sealed TO-78-6 ceramic package suitable for high-reliability environments
• Extended operating temperature capability up to +200°C
• High DC current gain for small-signal amplification applications

Applications

• Military aerospace circuits requiring radiation hardness
• Spacecraft avionics and satellite communication systems
• High-temperature industrial control electronics

Procurement Notes

Verify the specific revision level and lot traceability documentation prior to procurement. Confirm that the TO-78-6 package dimensions match the target PCB footprint. Ensure that the supplier provides full material declarations and compliance certificates required for defense or aerospace contracts. Validate that the ordering suffix corresponds to the exact reel or tube configuration needed for assembly processes.

Selection Notes

Select this component when a hermetically sealed NPN transistor is required for extreme thermal environments. The TO-78-6 package offers superior thermal stability compared to standard plastic packages. Consider the 350 mW power dissipation limit when designing heat management strategies. Verify that the 60 V collector-emitter voltage aligns with the circuit's maximum supply rails and transient spikes.

Part Context

This part belongs to the JANTXV series of radiation-hardened bipolar transistors produced by Microchip Technology. The series is engineered for use in harsh electromagnetic and thermal environments typical of military and space applications. The JANTXV designation indicates enhanced screening and reliability testing beyond standard commercial grades.

Replacement Considerations

Direct replacements must match the TO-78-6 pinout and hermetic sealing requirements. Equivalent parts include other JANTXV-series NPN transistors with similar voltage and current ratings. Verify that any substitute maintains the same radiation hardness level and high-temperature operational limits.