SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The JANTXV2N3810U/TR is a dual PNP small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a silicon construction housed in an LCC-6 surface-mount package. The device supports a maximum DC collector current of 50 mA and withstands collector-emitter and collector-base voltages of 60 V each, with an emitter-base voltage rating of 5 V. Power dissipation is rated at 350 mW. The component operates within a temperature range of -65°C to +200°C. DC current gain (hFE) ranges from a minimum of 100 to a maximum of 450 under specified test conditions.
Verify the specific suffix /TR indicates tape and reel packaging when ordering. Confirm that the component complies with MIL-PRF-19500/336 standards if military qualification is required. Check for RoHS non-compliance status as indicated in official documentation. Ensure the supplier provides traceability data consistent with defense procurement requirements.
Select this component for applications requiring dual PNP transistors in a surface-mount format with high thermal tolerance. Compare the 50 mA current limit and 60 V voltage ratings against circuit demands. Consider the LCC-6 footprint for PCB layout constraints. Evaluate the hFE range to ensure adequate gain for the intended signal amplification or switching tasks.
This part belongs to the 2N3810 series of dual PNP transistors produced by Microchip. It shares core electrical characteristics with through-hole variants like the JANTXV2N3810U but utilizes an LCC-6 surface-mount package. The /TR suffix denotes reel packaging, distinguishing it from bulk-packed equivalents while maintaining identical functional specifications.
The JANTXV2N3810U serves as a direct replacement for the JANTXV2N3810U in terms of function. Verify pinout compatibility between LCC-6 and alternative packages before substitution. Cross-reference with other 2N3810 family members only if package differences are acceptable.