SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The JANTXV2N3811 is a dual PNP silicon small-signal bipolar junction transistor (BJT) manufactured by Microsemi. It features a hermetically sealed metal can package, typically TO-77 or TO-78, designed for high-reliability applications. Key electrical parameters include a maximum collector current of 0.05 A and a collector-emitter breakdown voltage of 60 V. The device exhibits a minimum DC current gain (hFE) of 250. It operates within an extended temperature range up to +200 °C and is qualified to withstand radiation exposure of 100 kRad(Si), ensuring performance in harsh environments.
Verify the specific suffix designation (e.g., L, U, S) against the original design specification, as these indicate distinct pin configurations and package variations such as TO-77 or TO-78. Confirm radiation qualification status and manufacturer lot traceability requirements before procurement. Ensure compatibility with existing board layouts due to through-hole leaded package constraints.
Select this component when radiation tolerance and long-term reliability are critical. Compare hFE ranges and package dimensions against alternative dual PNP transistors. Verify that the 60 V breakdown voltage meets circuit requirements. Consider thermal management needs given the high maximum operating temperature rating.
This part belongs to the 2N3811 series of dual PNP transistors produced under military specifications. It is often associated with legacy defense and space programs requiring proven silicon switching technology. The JANTXV prefix denotes a specific level of screening and quality assurance beyond standard commercial grades.
Direct substitutes may include JAN2N3811 or JANTX2N3811 variants, provided the package type and pinout match exactly. Verify radiation hardness levels if the application involves ionizing environments. Cross-reference with other manufacturers' MIL-spec equivalents only after confirming all electrical and mechanical parameters.