JANTXV2N4957

Overview

The JANTXV2N4957 is a single NPN silicon small-signal bipolar junction transistor (BJT) manufactured by Microsemi. It features a maximum collector-emitter voltage of 60 V and a continuous collector current of 100 mA. The device dissipates up to 500 mW of power and operates within a temperature range of -65 °C to +200 °C. It utilizes an LCC-3 surface-mount package configuration.

Feature Summary

• Radiation-hardened design for reliable operation in high-radiation environments
• Extended thermal stability supporting high-temperature applications
• Single NPN configuration optimized for switching and amplification

Applications

• Military aerospace systems requiring radiation tolerance
• High-reliability communication equipment
• Harsh environment industrial control circuits

Procurement Notes

Verify the specific suffix against official Microchip documentation, as ordering codes may indicate variations in testing or screening levels. Confirm RoHS compliance status directly with the manufacturer, as military-grade parts often carry specific environmental declarations distinct from commercial standards.

Selection Notes

Select this component when radiation hardness is mandatory for single NPN switching tasks. Ensure the 60 V rating and 100 mA current capacity align with circuit requirements. Verify that the LCC-3 footprint matches the PCB layout constraints for the target application.

Part Context

This part belongs to the JANTXV series of radiation-hardened silicon transistors produced by Microchip Technology. The series provides enhanced reliability for defense and space applications where standard commercial components would fail due to ionizing radiation exposure.

Replacement Considerations

Consult official substitution lists for equivalent radiation-hardened NPN transistors. Verify pinout compatibility and electrical parameter margins before replacing the original component in existing designs.