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The JANTXV2N5794 is a dual small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It features an NPN configuration housed in a TO-78-6 ceramic package designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 60 V and a collector-base voltage of 100 V, with an emitter-base voltage rating of 7 V. It handles a continuous DC collector current of 500 mA and dissipates up to 2.12 W of power. The component operates within a temperature range of -65°C to +200°C, offering a minimum DC current gain of 25 at 10 uA and 5 V, and a maximum gain of 150 at 10 mA and 5 V.
Verify the specific suffix against official Microchip documentation to confirm exact electrical tolerances and testing levels. Confirm RoHS compliance status as indicated in product specifications. Validate lead times directly with authorized distributors due to potential manufacturing delays associated with specialized military-grade components.
Select this component when a dual NPN topology is required in a ruggedized ceramic package. Ensure the design accommodates the 2.12 W power dissipation limit and the specified current gain ranges. Verify that the TO-78-6 footprint matches the target PCB layout requirements for through-hole assembly.
This part belongs to the JANTXV series of high-reliability semiconductors produced by Microchip Technology. The series targets defense and aerospace sectors where standard commercial components fail under harsh environmental stress. The JANTXV designation indicates specific screening and quality assurance protocols beyond standard industrial grades.
Direct replacements must match the TO-78-6 package and dual NPN configuration. Verify equivalent voltage and current ratings. Consult Microchip for qualified alternate sources or updated revision notices affecting pin compatibility.