JANTXV2N5794A

JANTXV2N5794A

$109.52
  • Description:TRANS 2NPN 40V 600MA TO-78-6
  • Series:-

SKU:fa89b2d8ba31 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN 40V 600MA TO-78-6
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):600mA
  • Voltage - Collector Emitter Breakdown (Max):40V
  • Vce Saturation (Max) @ Ib, Ic:900mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
  • Power - Max:600mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-78-6 Metal Can
  • Supplier Device Package:TO-78-6
  • Grade:Military
  • Qualification:MIL-PRF-19500/495

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JANTXV2N5794A

Overview

The JANTXV2N5794A is a dual NPN bipolar junction transistor array manufactured by Microchip Technology. It utilizes silicon planar technology and is housed in a TO-78-6 metal can package designed for through-hole mounting. The device features two independent NPN transistors within a single unit, rated for a maximum collector-emitter voltage of 40 V and a continuous collector current of 600 mA. Thermal performance is defined by a power dissipation limit of 600 mW. The component supports an operating temperature range from -55 °C to +125 °C, ensuring reliability in demanding environments.

Feature Summary

  • Dual NPN configuration providing two independent switching or amplification channels in one package
  • Robust TO-78-6 metal can construction suitable for high-reliability applications
  • Silicon planar technology optimized for stable electrical characteristics

Applications

  • Military aerospace electronic systems requiring radiation-hardened components
  • High-reliability communication equipment signal processing circuits
  • Industrial control systems operating in extreme temperature conditions

Procurement Notes

Verify the specific suffix designation against official Microchip documentation to confirm exact qualification levels and testing standards. Ensure that the procurement channel provides valid traceability records consistent with defense or industrial supply chain requirements. Confirm package integrity upon receipt to prevent damage to the metal can structure during handling and installation processes.

Selection Notes

Select this component when a compact dual NPN solution is required for space-constrained designs. Consider the TO-78-6 footprint constraints and thermal management needs associated with the 600 mW dissipation rating. Evaluate the 40 V voltage rating against circuit peak voltages to ensure adequate safety margins for long-term operational stability.

Part Context

This part belongs to the JANTXV series of radiation-hardened bipolar transistors produced by Microchip Technology. The series targets sectors requiring enhanced reliability beyond standard commercial grades. The dual configuration offers design flexibility compared to discrete single transistors, reducing board space while maintaining high-performance switching capabilities in critical applications.

Replacement Considerations

Consult official Microchip cross-reference guides for verified equivalent parts. Do not substitute with non-qualified commercial variants without validating radiation hardness and thermal specifications.

JANTXV2N5794AJANTXV2N5794A
$109.52
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