JANTXV2N5795A

Overview

The JANTXV2N5795A is a dual PNP bipolar junction transistor (BJT) array manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-78-6 hermetic package for through-hole mounting. The device supports a maximum collector-emitter voltage of 60 V and a continuous collector current of 600 mA. Power dissipation is rated at 600 mW, with an operating temperature range from -65 °C to +175 °C. It features a minimum DC current gain (hFE) of 40.

Feature Summary

• Dual PNP configuration within a single hermetic package
• High-temperature operation capability up to 175 °C
• Radiation-hardened design suitable for harsh environments

Applications

• Military aerospace circuits
• Satellite communication systems
• Harsh environment signal processing

Procurement Notes

Verify the specific revision level and lot traceability documentation upon order confirmation. Ensure that the procurement channel provides valid certification for radiation hardness and material compliance. Confirm that the TO-78-6 package integrity meets military specifications for the intended deployment environment.

Selection Notes

Select this component when a matched pair of PNP transistors is required in a hermetic package. It is appropriate for designs demanding high thermal stability and radiation tolerance. Consider the 600 mA current limit and 60 V voltage rating during circuit planning to ensure safe operating area compliance.

Part Context

This part belongs to the JANTXV series of radiation-hardened bipolar transistors. It serves as a dual-array alternative to single discrete units, saving board space. The TO-78-6 package provides superior environmental sealing compared to standard plastic packages, ensuring reliability in vacuum or corrosive conditions.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data.