JANTXV2N5796

Overview

The JANTXV2N5796 is a dual PNP small-signal bipolar junction transistor manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-78-6 hermetic package designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 60 V and a collector-base voltage of 60 V, with an emitter-base voltage rating of 5 V. It dissipates up to 600 mW of power and operates within a temperature range of -65°C to +175°C. The component features a continuous collector current of 600 mA, a saturation voltage of 1.6 V, and a minimum DC current gain (hFE) of 40.

Feature Summary

• Dual configuration integrating two PNP transistors within a single hermetic ceramic package.

Applications

• Military aerospace circuits requiring radiation hardness and high reliability.

Procurement Notes

Verify the specific revision level and lot traceability documentation upon receipt. Confirm that the TO-78-6 package dimensions match the design constraints. Ensure handling procedures account for the hermetic seal integrity. Validate all electrical parameters against the official datasheet specifications before integration into the final assembly process.

Selection Notes

Select this component when a dual PNP configuration is required in a hermetic environment. Compare the 600 mA current limit and 600 mW power dissipation against circuit demands. Consider the TO-78-6 footprint for board layout compatibility. Evaluate the extended temperature range suitability for the intended operational conditions.

Part Context

This part belongs to the JANTXV series of military-grade discrete semiconductors produced by Microchip Technology. The series adheres to strict quality standards for defense and aerospace applications. The 'V' suffix typically denotes enhanced screening or testing levels compared to standard commercial variants.

Replacement Considerations

Jantxv2N5796