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The JANTXV2N5796A is a dual PNP bipolar junction transistor manufactured by Microchip Technology. It utilizes silicon technology and features a TO-78-6 through-hole package. The device supports a maximum collector current of 600 mA and a power dissipation of 600 mW. Key voltage ratings include a collector-emitter voltage (VCEO) of 60 V, a collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 5 V. The collector-emitter saturation voltage is specified at 1.6 V. Operating temperatures range from -65°C to +175°C junction temperature.
Verify the specific suffix and lot code against the official Microchip datasheet to ensure compliance with military specifications. Confirm that the TO-78-6 package dimensions match the design requirements. Check for any required quality assurance documentation or traceability records mandated by the procurement contract.
Select this component when a dual PNP structure is required in a radiation-tolerant environment. The TO-78-6 package suits applications needing robust mechanical stability. Ensure the 60 V rating aligns with the circuit's voltage constraints and that the 600 mW dissipation fits the thermal management plan.
This part belongs to the JANTXV series of high-reliability transistors produced by Microchip Technology. These components are designed for demanding applications where standard commercial parts may fail. The series offers various configurations including single and dual transistors with enhanced performance characteristics.
Consult Microchip documentation for direct equivalents. Verify pinout compatibility and electrical parameters before substituting with other dual PNP transistors.