JANTXV2N7335

FET, MOSFET Arrays Overview

The JANTXV2N7335 is a high-reliability, hermetically sealed P-channel silicon power MOSFET manufactured by Microsemi. It features a four-element configuration with built-in diodes housed in a ceramic metal-sealed MO-036AB DIP package containing 14 pins. The device supports a drain-source breakdown voltage of 100 V and a continuous drain current of 0.75 A. Its maximum on-resistance is specified at 1.73 ohms, and it operates in enhancement mode. The component is rated for an avalanche energy capability of 75 mJ.

FET, MOSFET Arrays Feature Summary

• Hermetically sealed construction using ceramic metal-sealed cofired materials for environmental protection
• Four-element discrete configuration integrated within a single 14-pin dual in-line package
• Built-in diode structures included within the separate element arrangement
• Enhancement mode operation utilizing silicon metal-oxide semiconductor technology

FET, MOSFET Arrays Applications

• Military aerospace electronic systems requiring radiation hardening or strict environmental sealing
• High-reliability industrial power switching circuits demanding long-term stability
• Defense communication equipment utilizing ruggedized discrete semiconductor components

FET, MOSFET Arrays Procurement Notes

Verify the specific revision level and lot traceability documentation upon order confirmation. Ensure that the procurement channel provides valid military qualification certificates consistent with the JANTXV designation. Confirm that the delivered units match the hermetic seal requirements specified in the official datasheet to maintain operational integrity in harsh environments.

FET, MOSFET Arrays Selection Notes

Select this component when a hermetically sealed P-channel MOSFET is required for critical applications. The four-element layout allows for complex circuit integration within a compact footprint. Consider the 1.73 ohm on-resistance and 0.75 ampere current limit during thermal design. The 100 volt rating defines the maximum operating voltage boundary for safe system performance.

FET, MOSFET Arrays Part Context

This part belongs to the Microsemi JANTXV series of high-reliability discrete semiconductors. These components are designed to meet stringent military standards for durability and performance consistency. The JANTXV suffix indicates a specific quality screening level above standard commercial grades, ensuring suitability for defense and space-oriented hardware deployments.

FET, MOSFET Arrays Replacement Considerations

Consult official Microsemi substitution guides for verified equivalents. Generic replacements may not satisfy the hermetic sealing or four-element configuration requirements.