Single Bipolar Transistors JANTXV2N7371 product image

JANTXV2N7371

  • Description:TRANS PNP DARL 100V 12A TO-254AA
  • Series:-

SKU:772805176e77 Category: Brand:

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JANTXV2N7371 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS PNP DARL 100V 12A TO-254AA. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JANTXV2N7371

  • Description:TRANS PNP DARL 100V 12A TO-254AA
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:PNP - Darlington
  • Current - Collector (Ic) (Max):12:00 AM
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:3V @ 120mA, 12A
  • Current - Collector Cutoff (Max):1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 6A, 3V
  • Power - Max:100 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-254-3, TO-254AA (Straight Leads)
  • Supplier Device Package:TO-254AA
  • Grade:Military
  • Qualification:MIL-PRF-19500/623

Single Bipolar Transistors datasheet and documents for JANTXV2N7371

JANTXV2N7371

Single Bipolar Transistors Overview

The JANTXV2N7371/TR is a silicon PNP power bipolar junction transistor manufactured by Microchip Technology. It utilizes a TO-39-3 metal can package designed for through-hole mounting. The device supports a maximum DC collector current of 2 A and withstands a collector-emitter voltage (VCEO) of 80 V. Key electrical limits include a collector-base voltage (VCBO) of 100 V and an emitter-base voltage (VEBO) of 5.5 V. Power dissipation is rated at 1 W, with a collector-emitter saturation voltage of 1.5 V. The component operates within a temperature range of -65°C to +200°C.

Single Bipolar Transistors Feature Summary

  • High-temperature operation capability up to 200°C
  • Radiation-hardened design for harsh environments
  • Metal can construction for thermal stability

Single Bipolar Transistors Applications

  • Military aerospace systems
  • Satellite electronics
  • Spacecraft power management

Single Bipolar Transistors Procurement Notes

Verify the specific suffix configuration when ordering, as variations such as /TR may indicate tape-and-reel packaging which differs from standard bulk units. Confirm radiation hardness levels and lot traceability requirements directly with the manufacturer or authorized distributors. Ensure that the procurement channel provides necessary documentation for quality assurance in regulated sectors.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring robust performance under extreme thermal conditions and ionizing radiation exposure. The TO-39-3 package offers superior heat dissipation compared to plastic alternatives. Evaluate the 2 A current rating against peak load demands to ensure adequate margin. Consider the high operating temperature limit when designing thermal management strategies for enclosed military hardware.

Single Bipolar Transistors Part Context

This part belongs to the JANTXV series of radiation-hardened semiconductors produced by Microchip Technology. These components are engineered specifically for defense and space applications where standard commercial parts would fail due to environmental stressors. The series maintains strict manufacturing controls to ensure reliability in vacuum and high-radiation environments.

Single Bipolar Transistors Replacement Considerations

Direct replacements must match the JANTXV radiation-hardened specifications. Verify equivalent parts such as the JANS2N7371 for similar military-grade performance. Cross-reference pinouts and mechanical dimensions to ensure compatibility with existing TO-39-3 footprints without redesigning the circuit board.

JANTXV2N7371JANTXV2N7371

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