SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The JTDB25 is an NPN radio frequency power transistor manufactured by Microsemi Corporation. It operates within a transition frequency range of 960MHz to 1.215GHz and supports a maximum collector current of 5A. The device features a maximum collector-emitter breakdown voltage of 55V and delivers a maximum power output of 97W. It provides a gain of 7.5dB with a minimum DC current gain (hFE) of 20 at 500mA and 5V. The component is housed in a 55AW-1 base-mount package, designed for high thermal performance with a maximum junction temperature of 200°C.
Verify the obsolete status indicated in public records before procurement planning. Confirm that the 55AW-1 base-mount package dimensions match existing thermal interface designs. Ensure compatibility with the required 55V supply rails and 5A drive capabilities. Check for available cross-reference components if original stock is unavailable due to discontinuation.
Select this component for applications requiring high power density in the UHF spectrum. Verify that the system can accommodate the base-mount mechanical form factor and associated thermal management requirements. Ensure the operating voltage remains below the 55V breakdown limit and that biasing circuits support the specified 5A collector current constraints.
The JTDB25 belongs to the category of bipolar junction transistors specifically engineered for radio frequency applications. Manufactured by Microsemi Corporation, it utilizes silicon technology to achieve high power handling in a ruggedized package. This part is distinct from low-power signal transistors due to its substantial 97W power rating and specialized UHF frequency optimization.
Public records indicate the part is obsolete. No specific verified substitute part numbers are provided in the source data. Engineers must identify equivalent NPN RF power transistors with matching 55AW-1 footprints, 97W power ratings, and compatible UHF frequency ranges.