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The KBU1003G is a single-phase silicon bridge rectifier manufactured by Taiwan Semiconductor. It features a maximum average forward rectified current of 10 A and a repetitive peak reverse voltage rating of 200 V. The device supports a non-repetitive peak forward surge current of 200 A at 60 Hz. Electrical characteristics include a maximum RMS input voltage of 140 V, a maximum DC blocking voltage of 160 V, and a typical reverse leakage current of 5 µA at rated DC blocking voltage. The component operates within a junction temperature range of -55 °C to +150 °C and exhibits a maximum forward voltage drop of 1.1 V.
Verify the specific manufacturer part number against official Taiwan Semiconductor documentation to confirm exact electrical ratings and package specifications. Ensure compliance with relevant environmental directives such as RoHS before procurement. Cross-reference datasheet parameters with system requirements to validate thermal and electrical suitability for the intended design.
Select this component when a 10 A single-phase bridge rectifier with a 200 V reverse voltage rating is required. Verify that the application's peak inverse voltage does not exceed the specified limits. Consider the KBU-4 through-hole package dimensions for PCB layout constraints. Confirm thermal management requirements align with the specified operating temperature range.
This component belongs to the KBU100 series of single-phase bridge rectifiers from Taiwan Semiconductor. The series offers various voltage ratings while maintaining a consistent 10 A current capacity and KBU-4 package form factor. This specific variant provides the 200 V reverse voltage option within the lineup.
Compatible alternatives include the KBU1003 from other manufacturers offering identical 10 A and 200 V specifications in a KBU-4 package. Verify pinout compatibility and physical dimensions before substitution.