KFCAB21490L

$0.31

Description：MOSFET 2N-CH 12V 13.5A 10SMD
Series：-

SKU:bb6030f0d5ed Category: FET, MOSFET Arrays Brand: Nuvoton Technology Corporation

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

KFCAB21490L is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Nuvoton Technology Corporation. Its product description is MOSFET 2N-CH 12V 13.5A 10SMD. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for KFCAB21490L

Description：MOSFET 2N-CH 12V 13.5A 10SMD
Series：-
Mfr：Nuvoton Technology Corporation
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel, Common Drain
FET Feature：-
Drain to Source Voltage (Vdss)：12V
Current - Continuous Drain (Id) @ 25°C：13.5A (Ta)
Rds On (Max) @ Id, Vgs：2.75mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id：1.4V @ 1.11mA
Gate Charge (Qg) (Max) @ Vgs：25nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds：3570pF @ 10V
Power - Max：540mW (Ta)
Operating Temperature：150°C
Mounting Type：Surface Mount
Package / Case：10-SMD, No Lead
Supplier Device Package：10-SMD
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for KFCAB21490L

KFCAB21490L

FET, MOSFET Arrays Overview

The KFCAB21490L is a dual N-channel MOSFET array manufactured by Nuvoton Technology Corporation. It features an integrated gate resistor and utilizes a CSP (Chip Size Package) with a 10-SMD, no-lead footprint. The device supports a source-source voltage of 12V and offers a typical source-source on-state resistance of 2.2 mΩ at VGS = 3.8V. Key electrical characteristics include a maximum gate-source threshold voltage of 1.4V and a total gate charge of 25nC at VGS = 4V. The component operates within a junction temperature range up to 150°C and complies with RoHS standards.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration with integrated gate resistors for simplified circuit design
Low profile Chip Size Package (CSP) suitable for space-constrained applications
Halogen-free construction compliant with EU RoHS directives

FET, MOSFET Arrays Applications

Lithium-ion secondary battery protection circuits
Power management systems requiring low on-resistance switching
Portable electronic devices utilizing CSP packaging

FET, MOSFET Arrays Procurement Notes

Verify the specific revision status and manufacturing date code upon order confirmation. Ensure that the receiving inspection accounts for the Embossed type thermo-compression sealing packaging standard. Confirm compliance requirements such as RoHS and halogen-free status align with project specifications before finalizing procurement.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual N-channel solution with built-in gate resistors is required. The low on-state resistance makes it suitable for high-efficiency power paths. Consider the thermal performance on FR4 versus ceramic substrates when designing heat dissipation strategies. Verify that the 12V rating meets the system voltage requirements.

FET, MOSFET Arrays Part Context

This part belongs to Nuvoton's discrete semiconductor lineup, specifically designed for battery protection applications. It integrates two N-channel MOSFETs into a single package to save board space. The inclusion of gate resistors reduces external component count and simplifies layout compared to discrete MOSFET pairs.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Any replacement must be verified against pinout, electrical parameters, and package dimensions independently.