KFCAB21520LE

$1.71

Description：MOSFET 2N-CH 12V 16A 10SMD
Series：-

SKU:06d7c1d63c45 Category: FET, MOSFET Arrays Brand: Nuvoton Technology Corporation

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Product introduction

KFCAB21520LE is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Nuvoton Technology Corporation. Its product description is MOSFET 2N-CH 12V 16A 10SMD. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for KFCAB21520LE

Description：MOSFET 2N-CH 12V 16A 10SMD
Series：-
Mfr：Nuvoton Technology Corporation
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Common Drain
FET Feature：-
Drain to Source Voltage (Vdss)：12V
Current - Continuous Drain (Id) @ 25°C：16A (Ta)
Rds On (Max) @ Id, Vgs：2mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id：1.4V @ 1.64mA
Gate Charge (Qg) (Max) @ Vgs：38nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds：5250pF @ 10V
Power - Max：540mW (Ta)
Operating Temperature：150°C
Mounting Type：Surface Mount
Package / Case：10-SMD, No Lead
Supplier Device Package：10-SMD
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for KFCAB21520LE

KFCAB21520LE

FET, MOSFET Arrays Overview

The KFCAB21520L is a dual N-channel MOSFET with integrated gate resistors, designed for lithium-ion secondary battery protection circuits. It features a CSP package and operates within a source-source voltage range of up to 12 V. The device supports DC source currents of 16 A and 35 A depending on the channel configuration, with a peak pulse current rating of 160 A. Typical on-resistance is 1.6 mΩ at VGS = 3.8 V. Electrical characteristics include a threshold voltage of 0.35 V to 1.40 V and total gate charge of 38 nC under standard test conditions.

FET, MOSFET Arrays Feature Summary

Integrated gate resistors simplify circuit design and reduce component count.
Dual N-channel architecture provides compact solution for battery protection applications.
Halogen-free and RoHS compliant construction meets environmental standards.

FET, MOSFET Arrays Applications

Lithium-ion secondary battery protection circuits
Battery management systems requiring compact power switching

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering code against the official datasheet revision history to ensure correct package and marking symbol (7T). Confirm thermal pad requirements for FR4 or ceramic substrates based on your board layout. Check for any updated revision notes regarding absolute maximum ratings before finalizing the design.

FET, MOSFET Arrays Selection Notes

Select this component when a dual MOSFET with built-in gate resistance is required for space-constrained battery protection designs. Ensure the operating voltage does not exceed the 12 V source-source limit. Consider the thermal resistance values provided for both FR4 and ceramic mounting options when calculating heat dissipation for continuous operation.

FET, MOSFET Arrays Part Context

This part belongs to Nuvoton's discrete semiconductor portfolio, specifically focusing on power MOSFETs for consumer and industrial electronics. The KFCAB21520L utilizes a Chip Size Package (CSP) to minimize footprint while maintaining high current handling capabilities suitable for portable electronic devices and battery packs.