KGF6N05D-400

FET, MOSFET Arrays Overview

The KGF6N05D-400 is a dual N-channel power MOSFET featuring a 20-bump WLCSP package with a die size of 2.475mm x 1.170mm. It operates within a -55°C to +150°C temperature range and supports a drain-to-source voltage of 5.5V. The device delivers a continuous current of 12A (6A per channel) and achieves a typical on-state resistance of 2.5mΩ at VGS = 4.5V, or 1.25mΩ when channels are paralleled. Total gate charge is typically 4.4nC at VGS = 4.5V. Input capacitance measures 552pF to 630pF at VDS = 5.5V.

FET, MOSFET Arrays Feature Summary

• Integrates low-cost CMOS and LGA fabrication processes for high-frequency switching
• Offers industry-leading figures of merit regarding on-resistance and gate charge products
• Utilizes Known Good FET quality assurance process
• Provides extremely high power density to reduce board space in DC/DC converters

FET, MOSFET Arrays Applications

• Point-of-load DC/DC converters
• Portable electronics
• OR-ing diodes

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix '-400' against the manufacturer's current documentation to confirm the exact pin mapping and marking code. Ensure that the 20-bump WLCSP package dimensions align with your PCB footprint design rules. Confirm thermal management requirements based on the junction-to-ambient resistance values provided in the datasheet for your specific mounting conditions.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring minimal footprint and low vertical profile due to its chip-scale WLCSP packaging. Consider the parallel connection capability if lower on-resistance is required, as connecting both channels reduces resistance to approximately 1.25mΩ. Evaluate the 5.5V breakdown voltage limit to ensure it suits the target circuit's operating voltage. Verify compatibility with standard SMT assembly processes during the design phase.

FET, MOSFET Arrays Part Context

This part belongs to the KGF series, which utilizes a Known Good FET manufacturing approach. It is designed to outperform conventional trench MOSFETs by offering superior power density and switching efficiency. The device integrates two independent N-channel MOSFETs into a single compact package, making it suitable for space-constrained power management systems.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the 20-bump WLCSP form factor and 5.5V rating. Check for equivalent dual N-channel configurations with similar rDS(ON) and Qg specifications. Verify that any substitute supports the same thermal characteristics and SMT reflow profiles.