KSA642YBU

Single Bipolar Transistors Overview

The KSA642YBU is a PNP epitaxial silicon transistor housed in a TO-92 package. It features a collector-base voltage of -30 V, a collector-emitter voltage of -25 V, and an emitter-base voltage of -5 V. The device supports a DC collector current of -300 mA and a pulse collector current of -500 mA. Collector power dissipation is rated at 400 mW with a junction temperature limit of 150 °C. The Y suffix indicates a DC current gain (hFE) classification range of 200 to 400 under test conditions of VCE = -1V and IC = -50mA.

Single Bipolar Transistors Feature Summary

• PNP epitaxial silicon construction designed for low frequency power amplifier applications
• Complementary pairing capability with the KSD227 NPN transistor
• High DC current gain classification available through specific ordering suffixes

Single Bipolar Transistors Applications

• Low frequency power amplification circuits
• General purpose switching applications within specified voltage and current limits
• Complementary push-pull amplifier stages when paired with KSD227

Single Bipolar Transistors Procurement Notes

Verify the component status as this datasheet originates from Fairchild Semiconductor archives. Confirm that the 'Y' suffix corresponds to the required hFE bin (200-400) for your design. Ensure the TO-92 pinout matches your PCB footprint, specifically identifying Emitter, Base, and Collector leads. Check for any lifecycle notices regarding discontinuation or replacement by onsemi.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with moderate voltage ratings (-25V VCEO) and up to 300mA continuous current is required. The high hFE range (200-400) makes it suitable for applications requiring significant current amplification without excessive base drive. Consider thermal management for the 400mW dissipation rating. Verify compatibility with the complementary KSD227 if used in balanced amplifier topologies.

Single Bipolar Transistors Part Context

The KSA642 series consists of PNP epitaxial silicon transistors manufactured by Fairchild Semiconductor, now part of onsemi. These devices are commonly used in audio and general-purpose analog circuits. The TO-92 package provides a compact solution for low-power applications. The model number includes suffixes indicating current gain bins, allowing designers to select components with specific amplification characteristics for precise circuit tuning.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not explicitly listed in the provided datasheet. Designers should consult onsemi's official cross-reference tools or equivalent PNP transistors with matching VCEO, IC, and hFE specifications. Verify pinout compatibility and thermal characteristics before substitution.

Single Bipolar Transistors FAQ

What does the 'Y' suffix indicate in the KSA642YBU part number?

The 'Y' suffix denotes a specific DC current gain (hFE) classification range of 200 to 400, tested at VCE = -1V and IC = -50mA.

Is the KSA642 designed for high-frequency operation?

No, the datasheet specifies the KSA642 as a Low Frequency Power Amplifier transistor, not optimized for high-frequency RF applications.

What is the maximum collector power dissipation?

The maximum collector power dissipation (PC) is 400 mW at an ambient temperature of 25°C.