KSB1149YSTU

Single Bipolar Transistors Overview

The KSB1149YSTU is a PNP Silicon Darlington Transistor manufactured by onsemi, originally documented under Fairchild Semiconductor. It features a TO-126 package with a collector current rating of -3 A and a collector-emitter voltage of -100 V. The device provides high DC current gain (hFE) ranging from 2000 to 20000 depending on classification, and low collector saturation voltage. Power dissipation is rated at 1.3 W at 25°C ambient temperature and 15 W at 25°C case temperature.

Single Bipolar Transistors Feature Summary

• High DC Current Gain
• Low Collector Saturation Voltage
• Built-in Damper Diode at E-C

Single Bipolar Transistors Applications

• Motor Control
• Power Switching
• Audio Amplifiers

Single Bipolar Transistors Procurement Notes

Verify the component status as obsolete or discontinued within the original manufacturer's lifecycle documentation. Confirm that the 'YSTU' suffix corresponds to the specific tape and reel packaging configuration for the TO-126 package. Ensure compatibility with legacy circuit designs requiring this specific pinout and electrical characteristics before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high current switching capabilities with minimal drive current due to its Darlington structure. Consider the thermal management requirements given the 1.3 W power dissipation limit at ambient temperature. Evaluate the hFE classification needed for the specific application to ensure sufficient gain margins are met during design.

Single Bipolar Transistors Part Context

This part belongs to the KSB series of PNP silicon darlington transistors. It is designed for general-purpose power switching applications where high gain and low saturation voltage are critical. The TO-126 package allows for effective heat dissipation when mounted to a heatsink, supporting higher power operations compared to smaller surface-mount packages.

Single Bipolar Transistors Replacement Considerations

• KSB1149G
• KSB1149O

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the KSB1149?

The maximum collector-emitter voltage (VCEO) is -100 V.

Does the KSB1149 include internal protection components?

Yes, it features a built-in damper diode connected between the emitter and collector terminals.

What is the typical turn-on time for this transistor?

The typical turn-on time (tON) is 0.5 µs under standard test conditions.