KSC1393OBU

KSC1393OBU

$0.02
  • Description:RF TRANS NPN 30V 700MHZ TO-92-3
  • Series:-

SKU:31c89212b2d8 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 30V 700MHZ TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):30V
  • Frequency - Transition:700MHz
  • Noise Figure (dB Typ @ f):2dB ~ 3dB @ 200MHz
  • Gain:20dB ~ 24dB
  • Power - Max:250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 2mA, 10V
  • Current - Collector (Ic) (Max):20mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

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KSC1393OBU

Overview

The KSC1393OBU is an NPN epitaxial silicon transistor designed for VHF tuner and RF amplifier applications. It features a collector-emitter voltage of 30V, a maximum collector current of 20mA, and a power dissipation rating of 250mW at 25°C. The device exhibits a typical current gain bandwidth product (fT) of 700MHz and a maximum noise figure of 3.0dB at 200MHz. Reverse transfer capacitance is limited to 0.5pF maximum. It is housed in a TO-92 package with three leads.

Feature Summary

  • High current gain bandwidth product suitable for VHF frequency operations
  • Low noise figure optimized for signal integrity in amplifiers
  • Minimal reverse transfer capacitance to maintain high-frequency performance

Applications

  • VHF Tuner circuits
  • RF Amplifier stages
  • Forward Automatic Gain Control (AGC) systems

Procurement Notes

Verify the manufacturer origin, as the component was originally produced by Fairchild Semiconductor. Confirm the specific hFE classification code (R, O, or Y) required for the circuit design, as gain ranges vary by bin. Ensure the TO-92 through-hole package matches the PCB footprint requirements.

Selection Notes

Select this component when a low-noise NPN transistor is needed for VHF bands. Check that the required DC current gain falls within the available classifications: R (40-80), O (60-140), or Y (90-180). Ensure the operating frequency does not exceed the fT specifications and that the 250mW power dissipation limit is respected under thermal constraints.

Part Context

This part belongs to the KSC1393 family of NPN epitaxial silicon transistors. It is functionally equivalent to other variants such as KSC1393RJ18Z and KSC1393YBU, differing primarily in packaging suffixes or hFE binning. The core electrical characteristics remain consistent across the series for VHF applications.

Replacement Considerations

Direct substitutes include KSC1393RJ18Z and KSC1393YBU. Verify that any replacement maintains the TO-92 package form factor and meets the 30V VCEO and 20mA IC limits.

KSC1393OBUKSC1393OBU
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