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The KSC1393OBU is an NPN epitaxial silicon transistor designed for VHF tuner and RF amplifier applications. It features a collector-emitter voltage of 30V, a maximum collector current of 20mA, and a power dissipation rating of 250mW at 25°C. The device exhibits a typical current gain bandwidth product (fT) of 700MHz and a maximum noise figure of 3.0dB at 200MHz. Reverse transfer capacitance is limited to 0.5pF maximum. It is housed in a TO-92 package with three leads.
Verify the manufacturer origin, as the component was originally produced by Fairchild Semiconductor. Confirm the specific hFE classification code (R, O, or Y) required for the circuit design, as gain ranges vary by bin. Ensure the TO-92 through-hole package matches the PCB footprint requirements.
Select this component when a low-noise NPN transistor is needed for VHF bands. Check that the required DC current gain falls within the available classifications: R (40-80), O (60-140), or Y (90-180). Ensure the operating frequency does not exceed the fT specifications and that the 250mW power dissipation limit is respected under thermal constraints.
This part belongs to the KSC1393 family of NPN epitaxial silicon transistors. It is functionally equivalent to other variants such as KSC1393RJ18Z and KSC1393YBU, differing primarily in packaging suffixes or hFE binning. The core electrical characteristics remain consistent across the series for VHF applications.
Direct substitutes include KSC1393RJ18Z and KSC1393YBU. Verify that any replacement maintains the TO-92 package form factor and meets the 30V VCEO and 20mA IC limits.