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The KSC1393RTA is an NPN epitaxial silicon transistor housed in a TO-92 package. It features a collector-base voltage of 30 V and a collector-emitter voltage of 30 V, with a maximum collector current of 20 mA. The device provides a typical current gain bandwidth product (fT) of 700 MHz at IC=3mA. Key electrical characteristics include a maximum reverse transfer capacitance (CRE) of 0.5 pF and a maximum noise figure of 3.0 dB at 200 MHz. DC current gain (hFE) ranges from 40 to 180 depending on the classification bin.
Verify the manufacturer origin, as the component was originally produced by Fairchild Semiconductor. Confirm that the specific RTA suffix corresponds to the required tape-and-reel packaging format if applicable. Ensure the received units match the RoHS compliance status indicated in the documentation. Cross-reference the datasheet revision date to confirm the accuracy of the provided electrical parameters before integration into the design.
Select this component for designs requiring low-noise performance in the Very High Frequency band. The 700 MHz fT specification supports operation up to 200 MHz with adequate gain margin. Consider the hFE classification bins (R, O, Y) to ensure the DC current gain meets the specific bias requirements of the amplifier stage. The TO-92 package limits power dissipation to 250 mW, restricting usage to small-signal applications.
The KSC1393 is an NPN epitaxial silicon transistor designed primarily for RF applications. Originally manufactured by Fairchild Semiconductor, it is characterized by its high transition frequency and low noise figure. The device is commonly utilized in tuner and amplifier circuits where signal integrity at VHF frequencies is critical. The TO-92 through-hole package facilitates easy prototyping and integration into standard circuit boards.
Direct substitutes may include other NPN RF transistors with similar fT and noise specifications, such as the 2SC3838 or generic equivalents like BC547 series if frequency requirements are relaxed. Verify pinout compatibility and thermal characteristics when swapping components.