KSC1393RTA

KSC1393RTA

$0.03
  • Description:RF TRANS NPN 30V 700MHZ TO-92-3
  • Series:-

SKU:4725d6611763 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 30V 700MHZ TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Box (TB)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):30V
  • Frequency - Transition:700MHz
  • Noise Figure (dB Typ @ f):2dB ~ 3dB @ 200MHz
  • Gain:20dB ~ 24dB
  • Power - Max:250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 2mA, 10V
  • Current - Collector (Ic) (Max):20mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

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KSC1393RTA

Overview

The KSC1393RTA is an NPN epitaxial silicon transistor housed in a TO-92 package. It features a collector-base voltage of 30 V and a collector-emitter voltage of 30 V, with a maximum collector current of 20 mA. The device provides a typical current gain bandwidth product (fT) of 700 MHz at IC=3mA. Key electrical characteristics include a maximum reverse transfer capacitance (CRE) of 0.5 pF and a maximum noise figure of 3.0 dB at 200 MHz. DC current gain (hFE) ranges from 40 to 180 depending on the classification bin.

Feature Summary

  • High current gain bandwidth product suitable for RF applications
  • Low noise figure optimized for signal amplification
  • Low reverse transfer capacitance for high-frequency stability

Applications

  • VHF tuner circuits
  • RF amplifier stages
  • Forward Automatic Gain Control (AGC) systems

Procurement Notes

Verify the manufacturer origin, as the component was originally produced by Fairchild Semiconductor. Confirm that the specific RTA suffix corresponds to the required tape-and-reel packaging format if applicable. Ensure the received units match the RoHS compliance status indicated in the documentation. Cross-reference the datasheet revision date to confirm the accuracy of the provided electrical parameters before integration into the design.

Selection Notes

Select this component for designs requiring low-noise performance in the Very High Frequency band. The 700 MHz fT specification supports operation up to 200 MHz with adequate gain margin. Consider the hFE classification bins (R, O, Y) to ensure the DC current gain meets the specific bias requirements of the amplifier stage. The TO-92 package limits power dissipation to 250 mW, restricting usage to small-signal applications.

Part Context

The KSC1393 is an NPN epitaxial silicon transistor designed primarily for RF applications. Originally manufactured by Fairchild Semiconductor, it is characterized by its high transition frequency and low noise figure. The device is commonly utilized in tuner and amplifier circuits where signal integrity at VHF frequencies is critical. The TO-92 through-hole package facilitates easy prototyping and integration into standard circuit boards.

Replacement Considerations

Direct substitutes may include other NPN RF transistors with similar fT and noise specifications, such as the 2SC3838 or generic equivalents like BC547 series if frequency requirements are relaxed. Verify pinout compatibility and thermal characteristics when swapping components.

KSC1393RTAKSC1393RTA
$0.03
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