KSC1674CYBU

Overview

The KSC1674CYBU is an NPN epitaxial silicon RF bipolar junction transistor manufactured by Fairchild Semiconductor. It is housed in a TO-92-3 (TO-226AA) through-hole package. The device features a maximum collector-emitter breakdown voltage of 20V and a maximum continuous collector current of 20mA. It has a transition frequency of 600MHz and a maximum power dissipation of 250mW. The DC current gain (hFE) is specified with a minimum value of 70 at 1mA and 6V. The component operates within a junction temperature range up to 150°C.

Feature Summary

• NPN epitaxial silicon construction for RF applications
• High transition frequency capability up to 600MHz
• Low noise figure performance typical of 3dB to 5dB at 100MHz
• Through-hole mounting in standard TO-92-3 package

Applications

• RF amplifier stages
• High-frequency oscillator circuits
• Small-signal RF processing

Procurement Notes

Verify the manufacturer designation carefully, as the KSC1674 series has been produced by multiple entities including Fairchild Semiconductor and onsemi. Confirm the specific datasheet version and electrical test conditions match the design requirements. Check for RoHS compliance status and lead-free certification if required by the assembly process. Ensure the TO-92-3 pinout configuration aligns with the PCB footprint layout before finalizing procurement.

Selection Notes

Select this component when an NPN RF transistor with a 20V VCEO rating and 600MHz transition frequency is required. The 20mA collector current limit and 250mW power dissipation define the operational boundaries. Compare the hFE minimum of 70 against circuit gain requirements. Consider the TO-92-3 package constraints for thermal management and mechanical integration in through-hole designs.

Part Context

The KSC1674 series belongs to the family of small-signal RF bipolar transistors designed for high-frequency operations. Variants such as KSC1674COBU and KSC1674OTA share similar electrical characteristics but may differ in packaging suffixes or manufacturing lots. The part is categorized under discrete semiconductors, specifically bipolar RF transistors, intended for consumer and communication electronics requiring low-noise amplification.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Cross-reference with other NPN RF transistors having comparable VCEO, IC, and fT specifications only after verifying detailed parameter alignment.