KSC1674RBU

KSC1674RBU

$0.02
  • Description:RF TRANS NPN 20V 600MHZ TO-92-3
  • Series:-

SKU:59c6b188a337 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 20V 600MHZ TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):20V
  • Frequency - Transition:600MHz
  • Noise Figure (dB Typ @ f):3dB ~ 5dB @ 100MHz
  • Gain:-
  • Power - Max:250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 1mA, 6V
  • Current - Collector (Ic) (Max):20mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

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KSC1674RBU

Overview

The KSC1674RBU is an NPN RF transistor manufactured by onsemi, designed for high-frequency applications. It operates with a maximum collector-emitter voltage of 20V and supports a transition frequency of 600MHz. The device handles a continuous collector current of 20mA and dissipates up to 250mW of power. It is housed in a TO-92-3 through-hole package, suitable for general-purpose RF amplification tasks.

Feature Summary

  • NPN bipolar junction transistor structure optimized for radio frequency signal processing
  • Capable of operating at frequencies up to 600MHz for high-speed switching or amplification
  • Low power dissipation rating of 250mW suitable for compact circuit designs

Applications

  • RF amplifier circuits
  • High-frequency signal processing modules
  • General-purpose radio frequency switching applications

Procurement Notes

Verify the exact manufacturer part number against official onsemi documentation to ensure authenticity. Confirm that the TO-92-3 package matches your PCB footprint requirements. Check for specific binning or gain groupings if precise RF performance matching is required for your design. Ensure compliance with relevant environmental standards such as RoHS if applicable to your project constraints.

Selection Notes

Select this component when an NPN configuration is required for RF stages operating below 600MHz. Consider the 20V voltage limit and 20mA current capacity to ensure safe operation within your circuit's power budget. The TO-92-3 package dictates specific mounting and thermal management strategies compared to surface-mount alternatives.

Part Context

This part belongs to the category of Bipolar (BJT) - Bipolar RF Transistors. It serves as a discrete semiconductor solution for analog and RF signal chains. Unlike integrated circuits, it provides a single active element for custom circuit implementation rather than complex logic or buffering functions.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Consult official cross-reference guides or distributor databases for compatible equivalents.

KSC1674RBUKSC1674RBU
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