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Product Detailed Parameters
- Description：RF TRANS NPN 20V 600MHZ TO-92-3
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：20V
- Frequency - Transition：600MHz
- Noise Figure (dB Typ @ f)：3dB ~ 5dB @ 100MHz
- Gain：-
- Power - Max：250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 6V
- Current - Collector (Ic) (Max)：20mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The KSC1674YBU is an NPN epitaxial planar silicon transistor manufactured by Fairchild Semiconductor, now part of ON Semiconductor. It is housed in a TO-92 (SOT-54) plastic package designed for through-hole mounting. The device features a maximum collector-emitter voltage of 20 V and a continuous collector current rating of 20 mA. It is characterized as a very high frequency component with a minimum DC current gain (hFE) of 120. The unit operates within a junction temperature range up to 150 °C and complies with lead-free manufacturing standards.
Feature Summary
- Very high frequency operation capability suitable for RF signal processing
- High DC current gain ensuring efficient amplification performance
- Lead-free construction compliant with environmental regulations
Applications
- General-purpose small-signal amplification
- Radio frequency (RF) switching circuits
- Audio pre-amplifier stages
Procurement Notes
Verify the manufacturer designation carefully, as Fairchild Semiconductor was acquired by ON Semiconductor. Ensure the ordering suffix matches the required packaging configuration. Confirm RoHS compliance status directly from the supplier documentation prior to procurement to meet regulatory requirements.
Selection Notes
Select this component when a low-voltage, low-current NPN transistor is required for high-frequency applications. Verify that the 20 V collector-emitter breakdown voltage meets the circuit's peak voltage requirements. Ensure the thermal management strategy supports the specified maximum junction temperature limit during operation.
Part Context
This component belongs to the family of small-signal bipolar junction transistors used in consumer electronics and communication devices. It serves as a fundamental active element for signal conditioning and switching tasks in low-power analog and digital circuits.
Replacement Considerations
Consult official datasheets for direct pin-compatible substitutes such as the KSC1673 or KSC1675 series. Verify electrical parameter equivalence before implementation.
