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KSC1845ETA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 120V 0.05A TO-92-3. Review the specifications below when checking this part for your BOM.
The KSC1845ETA is an NPN epitaxial silicon transistor manufactured by onsemi, designed for audio frequency low-noise amplifier applications. It features a collector-emitter voltage (VCEO) of 120 V and a maximum collector current (IC) of 50 mA. The device offers a DC current gain (hFE) ranging from 300 to 600 at IC = 1 mA and VCE = 6 V. Key electrical parameters include a current gain-bandwidth product (fT) of 50 to 100 MHz and a noise figure (NF) of approximately 7 dB at 1 kHz. Thermal characteristics specify a power dissipation (PD) of 500 mW and a junction-to-ambient thermal resistance of 250 °C/W.
Verify the specific suffix 'ETA' against the official datasheet ordering information table, as standard listings may reference 'FTA'. Confirm RoHS compliance status directly with the manufacturer or authorized distributors, as legacy stock may vary. Ensure the TO-92 package dimensions match the required PCB footprint before finalizing procurement orders.
Select this component when low noise performance is critical in audio signal paths. The high hFE range ensures efficient drive requirements for subsequent stages. Verify that the 120 V breakdown voltage meets the circuit's peak operating conditions. Consider the thermal resistance limits if operating near maximum power dissipation thresholds in enclosed environments.
This part belongs to the KSC1845 family of NPN epitaxial transistors produced by onsemi. The series is widely recognized for its use in analog audio processing and general-purpose switching applications. The KSC1845ETA variant shares core electrical specifications with other suffixes but differs in packaging or tape-and-reel configuration details defined by the manufacturer.
The KSA992 serves as the direct complementary PNP replacement for circuit symmetry. For generic replacements, verify matching VCEO, IC, and hFE specifications. Ensure the substitute device supports similar noise figures if used in low-noise amplifier designs.
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