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The KSC2756RMTF is an NPN epitaxial silicon transistor housed in a surface-mount SOT-23 package. It features a collector-emitter voltage of 20 V and a maximum collector current of 30 mA, with power dissipation rated at 150 mW. The device exhibits a transition frequency (fT) ranging from 500 to 850 MHz and a DC current gain (hFE) between 60 and 240 depending on the classification grade. Key electrical characteristics include a reverse transfer capacitance of 0.5 pF and a noise figure of 6.5 dB under specified mixer conditions.
Verify the component authenticity by checking the marking code against the datasheet specifications. Confirm the package type matches the SOT-23 outline dimensions provided in the official documentation. Ensure that the hFE classification grade aligns with the specific requirements of the target circuit design before finalizing procurement.
Select this component when designing circuits requiring an NPN transistor with a transition frequency up to 850 MHz. Consider the hFE classification grades (R, O, Y) to match the required DC current gain range for your specific application. Ensure the operating conditions remain within the absolute maximum ratings for voltage, current, and power dissipation.
This part belongs to the KSC2756 series of NPN epitaxial silicon transistors originally manufactured by Fairchild Semiconductor. The RMTF suffix indicates the specific tape and reel packaging format used for automated assembly processes. The component is designed for general-purpose RF applications, particularly where space constraints necessitate a small surface-mount package.
Check for direct replacements within the same manufacturer's portfolio or equivalent parts from other vendors that meet the 20 V VCEO, 30 mA IC, and 850 MHz fT specifications. Verify pinout compatibility and thermal characteristics to ensure seamless integration into existing designs without modifying the PCB layout.