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Product Detailed Parameters
- Description：RF TRANS NPN 20V 600MHZ TO-92S
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：20V
- Frequency - Transition：600MHz
- Noise Figure (dB Typ @ f)：3dB ~ 5dB @ 100MHz
- Gain：18dB ~ 22dB
- Power - Max：250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 1mA, 6V
- Current - Collector (Ic) (Max)：20mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 Short Body
- Supplier Device Package：TO-92S
- Grade：-
- Qualification：-
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Overview
The KSC2786OBU is an NPN epitaxial silicon transistor manufactured by onsemi, housed in a TO-92S (TO-226-3) package. It features a collector-base voltage of 30 V, a collector-emitter voltage of 20 V, and an emitter-base voltage of 4 V. The maximum collector current is 20 mA with a power dissipation rating of 250 mW. Electrical characteristics include a DC current gain ranging from 40 to 240 depending on the classification, a typical current gain bandwidth product of 600 MHz, and a noise figure between 3.0 dB and 5.0 dB at 100 MHz. The device operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- High current gain bandwidth product suitable for RF applications
- High power gain performance at 100 MHz
- Low noise figure characteristics for signal amplification
Applications
- TV PIF Amplifier
- FM Tuner RF Amplifier
- Mixer circuits
- Oscillator circuits
Procurement Notes
Verify component authenticity through authorized distributors or official manufacturer channels. Confirm that the part number matches the specific ordering suffix required for your application. Review the datasheet for absolute maximum ratings to ensure operational limits are not exceeded during integration.
Selection Notes
Select this component when designing circuits requiring high-frequency amplification with low noise profiles. Ensure the operating conditions remain within the specified collector current and voltage limits. Consider the thermal management requirements associated with the TO-92S package and the 250 mW power dissipation capability.
Part Context
This component belongs to the KSC2786 series of NPN epitaxial silicon transistors originally developed by Fairchild Semiconductor. The series is designed specifically for radio frequency applications, offering consistent performance metrics across different manufacturing batches while maintaining compatibility with standard TO-92 form factors.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical specifications before considering any alternative components.
