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The KSC2786OTA is an NPN epitaxial silicon transistor manufactured by onsemi, housed in a TO-92S package. It features a collector-base voltage of 30 V, a collector-emitter voltage of 20 V, and a maximum collector current of 20 mA. The device dissipates up to 250 mW with a junction temperature limit of 150 °C. Electrical characteristics include a DC current gain (hFE) ranging from 40 to 240 at 1 mA, a typical current gain bandwidth product (fT) of 600 MHz, and a power gain of 22 dB at 100 MHz. Noise figure specifications range between 3.0 and 5.0 dB.
Verify the component status carefully as datasheets indicate it may be obsolete or discontinued by Fairchild Semiconductor. Confirm availability through authorized distributors and check for updated part numbers if sourcing from onsemi channels. Ensure the specific OTA suffix matches the required packaging configuration before finalizing orders.
Select this component when designing circuits requiring an NPN transistor with a 20 V collector-emitter rating and low noise performance. The high fT makes it appropriate for frequencies around 100 MHz. Verify that the 20 mA collector current limit meets the load requirements and that the TO-92S package fits the thermal and spatial constraints of the target PCB layout.
This component belongs to the KSC2786 series of NPN epitaxial silicon transistors originally developed by Fairchild Semiconductor. The series is engineered specifically for radio frequency applications in consumer electronics. The KSC2786OTA variant utilizes the TO-92S short-body package, distinguishing it from standard TO-92 configurations while maintaining identical electrical parameters.
Check for direct equivalents within the KSC2786 family. Verify pinout compatibility for Emitter, Collector, and Base arrangements. Ensure replacement parts match the 20 V VCEO and 20 mA IC limits to maintain circuit integrity.
The typical current gain bandwidth product is 600 MHz.
The absolute maximum collector-base voltage is 30 V, and the collector-emitter voltage is 20 V.
Yes, it is specified for use at 100 MHz with a typical power gain of 22 dB and a noise figure between 3.0 and 5.0 dB.