KSC2786RBU

Overview

The KSC2786RBU is an NPN epitaxial silicon transistor manufactured by onsemi, housed in a TO-92S package. It features a collector-emitter voltage (VCEO) of 20 V and a continuous collector current of 20 mA. The device exhibits a typical current gain bandwidth product (fT) of 600 MHz and a maximum power dissipation of 250 mW. DC current gain (hFE) ranges from 40 to 240 depending on the classification suffix. Operating junction temperature extends up to 150 °C.

Feature Summary

• High current gain bandwidth product suitable for RF applications
• High power gain at 100 MHz frequency
• Low noise figure characteristics

Applications

• TV PIF Amplifier
• FM Tuner
• RF Amplifier
• Mixer
• Oscillator

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm datasheet revision status and RoHS compliance details prior to integration. Ensure storage conditions remain within specified limits to maintain electrical performance integrity.

Selection Notes

Select based on required hFE binning for specific gain targets. Evaluate thermal management requirements against the 250 mW dissipation limit. Verify operating frequency alignment with the 600 MHz fT specification for intended RF circuit designs.

Part Context

This component belongs to the KSC2786 series of NPN epitaxial silicon transistors designed for radio frequency amplification tasks. The RBU suffix indicates specific packaging and handling configurations within the broader product family.

Replacement Considerations

Direct substitutes include other NPN RF transistors with comparable VCEO, IC, and fT specifications. Verify pinout compatibility and thermal resistance values before implementation.