KSC2786RTA

Overview

The KSC2786RTA is an NPN epitaxial silicon transistor manufactured by onsemi, housed in a TO-92S surface-mount package. It features a collector-emitter voltage (VCEO) of 20 V and a maximum collector current (IC) of 20 mA. The device exhibits a typical current gain bandwidth product (fT) of 600 MHz at IC=1mA and VCE=6V. Power dissipation is rated at 250 mW with a junction temperature limit of 150 °C. DC current gain (hFE) ranges from 40 to 240 depending on the classification code. At 100 MHz, it provides a power gain (GPE) of up to 22 dB and a noise figure between 3.0 and 5.0 dB.

Feature Summary

• Designed for TV PIF amplifier applications
• Suitable for FM tuner RF amplification
• Capable of mixer and oscillator functions

Applications

• TV PIF Amplifier
• FM Tuner RF Amplifier
• Mixer
• Oscillator

Procurement Notes

Verify the specific hFE classification suffix (R, O, or Y) required for your circuit design, as this determines the minimum DC current gain range. Confirm that the TO-92S package dimensions align with your PCB footprint requirements. Ensure the operating conditions remain within the absolute maximum ratings, particularly the 20 mA collector current and 250 mW power dissipation limits, to maintain device reliability.

Selection Notes

Select the appropriate hFE bin based on the required gain stability for your application. The R, O, and Y suffixes indicate different gain ranges: 40-80, 70-140, and 120-240 respectively. Consider the noise figure specifications if low-noise performance is critical for the RF stage. Verify that the transition frequency meets the operational bandwidth needs of the target circuit.

Part Context

This component is part of the KSC2786 family of NPN epitaxial silicon transistors originally produced by Fairchild Semiconductor. The RTA suffix denotes the specific tape-and-reel packaging format for the TO-92S case. The device is optimized for high-frequency analog applications requiring moderate power gain and low noise characteristics in a compact surface-mount form factor.

Replacement Considerations

Direct substitutes include other NPN RF transistors with similar VCEO, IC, and fT specifications. Verify pinout compatibility (Emitter-Collector-Base) when replacing. Check datasheets for equivalent noise figures and power gain at 100 MHz to ensure circuit performance parity.