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The KSC2786YBU is an NPN epitaxial silicon transistor manufactured by onsemi, housed in a TO-92S package. It features a collector-base voltage of 30 V and a collector-emitter voltage of 20 V. The maximum collector current is 20 mA with a power dissipation rating of 250 mW. Key electrical characteristics include a DC current gain (hFE) ranging from 40 to 240 depending on the classification, a transition frequency (fT) up to 600 MHz, and a noise figure between 3.0 and 5.0 dB at 100 MHz. The device operates within a junction temperature range of -55 °C to 150 °C.
Verify component authenticity through authorized distributors or official manufacturer channels. Confirm the specific hFE classification suffix matches design requirements. Check datasheet revisions for updated electrical parameters. Ensure storage conditions remain within specified limits prior to assembly.
Select this component for designs requiring high-frequency amplification with moderate current handling. Compare fT and noise figure specifications against circuit requirements. Verify that the TO-92S package dimensions fit the PCB layout constraints. Consider thermal management capabilities given the 250 mW power dissipation limit.
This part belongs to the KSC2786 series of NPN epitaxial silicon transistors designed for radio frequency applications. It is commonly used in consumer electronics such as television tuners and FM receivers where signal integrity and gain are critical.
Check for direct pin-compatible substitutes with matching electrical ratings. Verify that alternative components meet the same fT and noise figure specifications. Ensure the replacement package type aligns with existing board space limitations.