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The KSC3123OMTF is an NPN epitaxial silicon RF bipolar transistor manufactured by onsemi. It operates with a collector-emitter voltage of 20 V and a continuous collector current of 50 mA, dissipating up to 150 mW. The device features a minimum DC current gain (hFE) of 60 and a current gain bandwidth product (fT) ranging from 900 to 1400 MHz. Designed for high-frequency applications, it exhibits a reverse transfer capacitance of 0.4 pF and supports junction temperatures up to 150°C. The component is housed in a surface-mount SOT-23 package.
Verify the specific ordering suffix against official documentation to confirm packaging details such as reel or cut tape specifications. Confirm RoHS compliance status through the manufacturer's latest release notes. Ensure the component source matches the authorized distributor list to prevent counterfeit parts. Check for any recent lifecycle changes or obsolescence notices before finalizing procurement plans.
Select this component when designing circuits requiring an NPN transistor with a 20V breakdown voltage and low input capacitance. The specified fT range supports operations well into the UHF spectrum. Verify that the thermal management strategy accommodates the 150 mW power dissipation limit within the SOT-23 footprint constraints.
This part belongs to the family of RF small-signal transistors designed for communication equipment. It serves as a specialized active element for frequency conversion and amplification tasks where low noise and high linearity are critical requirements for system performance.
Consult official cross-reference lists for verified substitutes. Ensure replacement devices match the SOT-23 package and maintain equivalent electrical characteristics for VCEO, IC, and fT.