KSC3123OMTF

KSC3123OMTF

$0.02
  • Description:RF TRANS NPN 20V 1.4GHZ SOT-23-3
  • Series:-

SKU:a0871c41b002 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 20V 1.4GHZ SOT-23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):20V
  • Frequency - Transition:1.4GHz
  • Noise Figure (dB Typ @ f):3.8dB ~ 5.5dB @ 200MHz
  • Gain:20dB ~ 23dB
  • Power - Max:150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:90 @ 5mA, 10V
  • Current - Collector (Ic) (Max):50mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:-
  • Qualification:-

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KSC3123OMTF

Overview

The KSC3123OMTF is an NPN epitaxial silicon RF bipolar transistor manufactured by onsemi. It operates with a collector-emitter voltage of 20 V and a continuous collector current of 50 mA, dissipating up to 150 mW. The device features a minimum DC current gain (hFE) of 60 and a current gain bandwidth product (fT) ranging from 900 to 1400 MHz. Designed for high-frequency applications, it exhibits a reverse transfer capacitance of 0.4 pF and supports junction temperatures up to 150°C. The component is housed in a surface-mount SOT-23 package.

Feature Summary

  • High-frequency operation capability suitable for UHF bands
  • Low reverse transfer capacitance for improved signal isolation
  • Integrated hFE grading for consistent amplification performance

Applications

  • UHF TV tuner mixer circuits
  • RF amplifier stages
  • Signal processing modules

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details such as reel or cut tape specifications. Confirm RoHS compliance status through the manufacturer's latest release notes. Ensure the component source matches the authorized distributor list to prevent counterfeit parts. Check for any recent lifecycle changes or obsolescence notices before finalizing procurement plans.

Selection Notes

Select this component when designing circuits requiring an NPN transistor with a 20V breakdown voltage and low input capacitance. The specified fT range supports operations well into the UHF spectrum. Verify that the thermal management strategy accommodates the 150 mW power dissipation limit within the SOT-23 footprint constraints.

Part Context

This part belongs to the family of RF small-signal transistors designed for communication equipment. It serves as a specialized active element for frequency conversion and amplification tasks where low noise and high linearity are critical requirements for system performance.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure replacement devices match the SOT-23 package and maintain equivalent electrical characteristics for VCEO, IC, and fT.

KSC3123OMTFKSC3123OMTF
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