KSC3123RMTF

Overview

The KSC3123RMTF is an NPN epitaxial silicon transistor manufactured by onsemi, packaged in a surface-mount SOT-23 configuration. It is designed for high-frequency applications with a collector-emitter breakdown voltage of 20 V and a maximum collector current of 50 mA. The device exhibits a current gain bandwidth product ranging from 900 to 1400 MHz at 5 mA. Key electrical characteristics include a DC current gain between 60 and 240, reverse transfer capacitance of 0.4 pF, and conversion gain up to 23 dB at 200 MHz. These specifications support its use as a mixer in UHF TV tuners.

Feature Summary

• High-frequency operation capability suitable for RF signal processing
• Low reverse transfer capacitance for improved isolation
• Integrated hFE classification for consistent gain performance

Applications

• UHF TV tuner mixer circuits
• RF signal amplification stages
• High-frequency switching applications

Procurement Notes

Verify the component status before procurement, as datasheets may indicate products are not recommended for new designs or have been discontinued. Confirm the specific hFE grade (R, O, or Y) required for your application during ordering, as this affects gain parameters. Ensure the SOT-23 package dimensions match your PCB footprint requirements.

Selection Notes

Select the KSC3123RMTF when designing circuits requiring an NPN transistor with a minimum 20 V collector-emitter voltage rating and operation around 200 MHz. Consider the hFE classification based on the required gain stability; Grade R offers 60-120 gain, while Grade Y provides 120-240. Verify that the 150 mW power dissipation limit accommodates the thermal conditions of the final assembly.

Part Context

This component belongs to the family of small-signal NPN transistors intended for radio frequency and audio applications. Originally documented under Fairchild Semiconductor, it is now part of the onsemi portfolio. The SOT-23 package allows for compact surface-mount integration in consumer electronics and communication devices where space constraints are critical.

Replacement Considerations

Check for direct cross-references within the onsemi catalog or equivalent NPN transistors with matching BVCEO (20V), IC (50mA), and fT (>900MHz) ratings. Verify pinout compatibility for SOT-23 packages if substituting with parts from other manufacturers.