Single Bipolar Transistors KSD1691GS product image

KSD1691GS

$1.32
  • Description:TRANS NPN 60V 5A TO-126-3
  • Series:-

SKU:2079593d2d85 Category: Brand:

  
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KSD1691GS is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 60V 5A TO-126-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for KSD1691GS

  • Description:TRANS NPN 60V 5A TO-126-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 200mA, 2A
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2A, 1V
  • Power - Max:1.3 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126-3

Single Bipolar Transistors datasheet and documents for KSD1691GS

KSD1691GS

Single Bipolar Transistors Overview

The KSD1691GS is a discontinued NPN epitaxial silicon transistor manufactured by onsemi. It utilizes a TO-126-3LD (CASE 340AS) through-hole package with an isolated flange mount. The device supports a maximum collector current of 5 A and a collector-emitter voltage of 60 V. It features a power dissipation rating of 1.3 W at 25°C ambient temperature, rising to 20 W at 25°C case temperature. The junction temperature limit is 150°C. The 'G' suffix indicates a DC current gain (hFE) classification range of 200 to 400.

Single Bipolar Transistors Feature Summary

  • High power dissipation capability for thermal management
  • Low collector-emitter saturation voltage for efficiency
  • Large continuous collector current handling
  • Complementary design pairing with the KSB1151 PNP transistor

Single Bipolar Transistors Applications

  • General-purpose switching applications
  • Power amplifier circuits
  • Driver stages requiring high current gain

Single Bipolar Transistors Procurement Notes

Verify component status before procurement as this specific part number has been officially marked as discontinued by the manufacturer. Confirm availability through authorized distributors or secondary markets. Ensure that any replacement components meet the original electrical specifications and physical footprint requirements to maintain circuit integrity.

Single Bipolar Transistors Selection Notes

Select this component only if legacy compatibility is required due to its discontinued status. Consider the hFE grade 'G' which specifies a gain range of 200 to 400. Evaluate alternative active devices from the same family or modern equivalents that offer similar voltage and current ratings in a TO-126 package.

Single Bipolar Transistors Part Context

This device belongs to the KSD1691 series of NPN power transistors. It is designed as a complementary pair to the KSB1151 PNP transistor. The series is characterized by high current handling and low saturation voltages, suitable for robust power switching environments.

Single Bipolar Transistors Replacement Considerations

KSD1691YS: Same device family with different hFE grading (100-200). KSD1691GSTU: Identical electrical specifications but packaged in tape and reel format instead of bulk.

KSD1691GSKSD1691GS
$1.32
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