Single Bipolar Transistors KSH29ITU product image

KSH29ITU

$0.13
  • Description:TRANS NPN 40V 1A IPAK
  • Series:-

SKU:2503ac2cfeee Category: Brand:

  
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KSH29ITU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 40V 1A IPAK. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for KSH29ITU

  • Description:TRANS NPN 40V 1A IPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Vce Saturation (Max) @ Ib, Ic:700mV @ 125mA, 1A
  • Current - Collector Cutoff (Max):50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 1A, 4V
  • Power - Max:1.56 W
  • Frequency - Transition:3MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-251-3 Short Leads, IPAK, TO-251AA
  • Supplier Device Package:IPAK

Single Bipolar Transistors datasheet and documents for KSH29ITU

KSH29ITU

Single Bipolar Transistors Overview

The KSH29CITU is a single NPN silicon epitaxial planar transistor manufactured by onsemi. It is housed in a TO-251-3 (SOT-143) surface-mount package designed for through-hole compatibility. The device supports a maximum continuous collector current of 1 A and withstands a collector-emitter voltage of 100 V. Key electrical characteristics include a DC current gain ranging from 15 to 75, a transition frequency of 3 MHz, and a power dissipation rating of 15 W. The component operates within a temperature range of -65°C to +150°C.

Single Bipolar Transistors Feature Summary

  • Epitaxial planar silicon construction for reliable switching performance
  • Single NPN configuration with high voltage tolerance
  • Surface-mount package compatible with standard mounting techniques

Single Bipolar Transistors Applications

  • General-purpose switching circuits
  • Low-frequency amplification stages
  • Driver applications requiring moderate current handling

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix and manufacturer documentation before integration. Confirm that the TO-251-3 package dimensions align with the target PCB footprint. Check for RoHS compliance status and material composition declarations if required by regulatory standards. Ensure availability matches project timelines as supply status may vary.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN transistor with 100 V breakdown and 1 A current capacity is required in a compact surface-mount form factor. Consider the 15 W power dissipation limit and thermal management requirements for the TO-251-3 package. Evaluate the hFE range and transition frequency against circuit bandwidth needs.

Single Bipolar Transistors Part Context

This part belongs to the bipolar junction transistor (BJT) category from onsemi. It utilizes silicon technology and is classified as an epitaxial planar device. The TO-251-3 package provides a balance between power handling and board space efficiency compared to larger through-hole alternatives.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for equivalent NPN transistors with matching voltage, current, and package specifications. Verify pinout compatibility and thermal characteristics before replacing the original component.

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