SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The KSK30RBU is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It is housed in a TO-92-3 through-hole package and operates with a maximum power dissipation of 100 mW. The device features a breakdown voltage of 50 V and a typical drain current of 300 µA at 10 V. It supports junction temperatures up to 125°C and exhibits an input capacitance of 8.2 pF at 0 V.
Verify the obsolete status of this component before design finalization, as it is marked as discontinued. Confirm availability through authorized distributors or secondary markets if sourcing is required. Ensure that any replacement strategy accounts for the end-of-life notification timeline to prevent supply chain disruptions during production.
Select this component for applications requiring low noise and high input impedance in small form factors. The TO-92-3 package limits thermal dissipation capabilities compared to larger packages. Consider the specific Idss range requirements and ensure the circuit design accommodates the 50 V breakdown limit for reliable operation under varying temperature conditions.
This part belongs to the KSK30 series of small-signal JFETs from onsemi. These devices are silicon-based, depletion-mode transistors designed for general-purpose analog switching and amplification. The series is characterized by its compact size and suitability for battery-powered or space-constrained electronic designs requiring stable performance.
Public confirmed substitute part numbers are not available in the provided documentation. Due to the discontinued status, alternative sourcing may require evaluating equivalent JFETs with matching pinouts and electrical characteristics from other manufacturers.