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The KSK30YTA is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It features a maximum drain-source breakdown voltage of 50 V and a continuous power dissipation of 100 mW. The device utilizes a TO-92-3 through-hole package with three pins. Key electrical characteristics include a typical drain current of 300 µA at a drain-source voltage of 10 V, and a gate-source cutoff voltage of 400 mV at a leakage current of 100 nA. The input capacitance is specified as 8.2 pF at 0 V. The component operates within a junction temperature range up to 125°C.
Verify the specific suffix YTA against official onsemi documentation to confirm packaging and tape-and-reel specifications. Confirm availability status as distribution data may indicate limited supply or end-of-life conditions. Ensure the selected variant matches the required thermal and electrical ratings for the target design environment.
Select this component for designs requiring low-power N-channel JFET switching or amplification. Evaluate the 50 V breakdown voltage and 100 mW power limit against circuit requirements. Consider the TO-92-3 package constraints for PCB layout and thermal management compared to surface-mount alternatives.
The KSK30 series represents a line of N-channel JFETs from onsemi, historically associated with Fairchild Semiconductor before integration. These devices are designed for general-purpose analog applications where low noise and high input impedance are beneficial. The KSK30YTA specifically denotes the packaged version available through standard distribution channels.
Consult official cross-reference guides for verified substitutes. Generic replacements must match the N-channel JFET topology, 50 V rating, and TO-92-3 form factor.