KSK595HMTF

$0.15

Description：JFET N-CH 1MA SOT23-3
Series：-

SKU:bda376b8149a Category: JFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：JFET N-CH 1MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
FET Type：N-Channel
Voltage - Breakdown (V(BR)GSS)：-
Drain to Source Voltage (Vdss)：-
Current - Drain (Idss) @ Vds (Vgs=0)：150 µA @ 5 V
Current Drain (Id) - Max：1 mA
Voltage - Cutoff (VGS off) @ Id：600 mV @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds：3.5pF @ 5V
Resistance - RDS(On)：-
Power - Max：100 mW
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3
Grade：-
Qualification：-

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KSK595HMTF

Overview

The KSK595HMTF is an N-channel Junction FET manufactured by onsemi, formerly Fairchild Semiconductor. It operates in a depletion mode with a maximum drain current of 1 mA and power dissipation of 100 mW. The device features a gate-drain breakdown voltage of -20 V and a forward transfer admittance ranging from 0.4 to 1.2 mS at 1 MHz. Packaged in SOT-23, it supports junction temperatures up to 150 °C.

Feature Summary

Designed for capacitor microphone applications
Provides excellent voltage characteristic stability
Offers excellent transient characteristic response

Applications

Audio capacitor microphones
Telephone capacitor microphones

Procurement Notes

Verify the component status carefully as this part was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm that the specific suffix matches the required package type and ensure compatibility with legacy designs referencing the original manufacturer documentation.

Selection Notes

Select this component specifically for low-current JFET applications requiring stable voltage characteristics. Ensure the circuit design accommodates the depletion mode operation and the specified gate-source cut-off voltage range. Verify thermal management capabilities within the 100 mW power dissipation limit.

Part Context

This component belongs to the family of small-signal silicon N-channel Junction FETs. It is distinct from MOSFETs due to its depletion mode operation and high input impedance. The SOT-23 packaging allows for surface-mount integration in compact electronic assemblies.