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The KSP10BU is an NPN silicon epitaxial planar transistor manufactured by Fairchild Semiconductor. It features a maximum collector-emitter voltage of 25 V and a maximum collector-base voltage of 30 V. The device supports a continuous collector current of 0.1 A with a power dissipation rating of 350 mW. It utilizes a TO-92 package for through-hole mounting. The component operates within a temperature range of -55 °C to +150 °C, ensuring reliability in various electronic applications.
Verify the manufacturer designation as Fairchild Semiconductor or its successor entity onsemi during sourcing. Confirm the specific suffix 'BU' corresponds to the required tape-and-reel or bulk packaging variant if applicable. Ensure compliance with RoHS directives and check for lead-free status documentation provided by the supplier.
Select this component when an NPN transistor with 25 V Vceo and 100 mA Ic is required. Compare against alternatives like the KSP10TA if different pinout or gain characteristics are needed. Verify that the 350 mW power dissipation limit meets the thermal requirements of the target application environment.
The KSP10BU belongs to the KSP10 series of NPN transistors from Fairchild Semiconductor. This series is designed for general-purpose use in low-voltage, low-current applications. The device shares similar electrical characteristics with other members of the family but may differ in packaging or specific manufacturing lot details.
Consult official cross-reference tools for equivalent parts. Potential substitutes include the KSP10TA or generic 2N3904 equivalents, subject to verification of pinout compatibility and exact electrical parameter matching against the original datasheet specifications.