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Product Detailed Parameters
- Description：RF TRANS NPN 25V 650MHZ SOT-23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：25V
- Frequency - Transition：650MHz
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：350mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 4mA, 10V
- Current - Collector (Ic) (Max)：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The KST10MTF is an NPN bipolar RF transistor manufactured by onsemi, housed in a surface-mount SOT-23-3 package. It features a maximum collector-emitter breakdown voltage of 25V and a transition frequency of 650MHz. The device supports a maximum power dissipation of 350mW and a continuous collector current rating. DC current gain (hFE) is specified with a minimum value of 60 at a collector current of 4mA and a collector-emitter voltage of 10V. This component is designed for radio frequency applications requiring compact packaging and reliable high-frequency performance.
Feature Summary
- NPN configuration optimized for radio frequency signal processing
- Transition frequency of 650MHz suitable for RF amplification stages
- Compact SOT-23-3 surface-mount package for space-constrained designs
Applications
- RF amplifier circuits
- General-purpose radio frequency signal processing
- High-frequency switching applications within rated limits
Procurement Notes
Verify the specific ordering suffix to confirm the correct tape and reel or cut tape configuration required for your assembly line. Confirm RoHS compliance status through official manufacturer documentation before integration. Ensure the active part status is validated against the latest production lifecycle notices to avoid obsolescence risks during long-term manufacturing.
Selection Notes
Select this component when an NPN RF transistor with a 650MHz transition frequency and 25V breakdown voltage is required. The SOT-23-3 package is appropriate for low-power RF designs needing minimal board space. Verify that the 350mW power dissipation limit aligns with the thermal management capabilities of the target PCB layout and operating environment.
Part Context
This component belongs to the category of discrete semiconductor bipolar junction transistors, specifically classified under RF bipolar transistors. It serves as a fundamental active element for amplifying or switching radio frequency signals in electronic systems. The product line focuses on providing reliable performance in compact packages for communication and signal processing hardware.
Replacement Considerations
Consult official substitution guides for verified equivalent parts. Do not assume pin-compatible alternatives without verifying electrical parameters such as transition frequency and breakdown voltage match the original specifications.
