KST5179MTF

Overview

The KST5179MTF is an NPN silicon RF small signal bipolar transistor manufactured by Fairchild Semiconductor. It is designed for ultra-high frequency band applications and housed in a surface-mount SOT-23 package with three pins. Key electrical parameters include a maximum collector-emitter voltage of 12 V, a maximum collector capacitance of 1 pF, and a single-element configuration. The device utilizes a plastic/epoxy rectangular encapsulation suitable for automated assembly processes.

Feature Summary

• Optimized for ultra-high frequency RF signal amplification
• Compact surface-mount SOT-23 packaging for space-constrained designs
• Low collector capacitance supporting high-frequency performance

Applications

• RF amplifier stages in communication equipment
• Ultra-high frequency signal processing circuits
• Wireless transmission modules

Procurement Notes

Verify the manufacturer designation as Fairchild Semiconductor or its successor entity ON Semiconductor, noting that Fairchild was acquired by ON Semiconductor. Confirm the specific suffix 'MTF' corresponds to the required tape-and-reel packaging format. Ensure the component meets RoHS compliance standards if required by the target application regulations.

Selection Notes

Select this component when an NPN transistor with a 12 V collector-emitter rating is required for UHF bands. The SOT-23 package dictates board layout constraints. Verify that the 1 pF maximum collector capacitance aligns with the impedance matching requirements of the specific RF circuit design.

Part Context

This part belongs to the family of RF small signal transistors intended for high-frequency operations. It shares the NPN silicon construction and SOT-23 form factor with similar devices like the MMBT5179, which is also documented by Fairchild Semiconductor and ON Semiconductor as an NPN RF transistor.

Replacement Considerations

The MMBT5179 is a documented equivalent NPN RF transistor from Fairchild Semiconductor and ON Semiconductor. Verify pinout compatibility and exact electrical limits before substitution.