L8104

RF Diode Overview

The CEL L8104 is a single PIN diode designed for radio frequency applications. It features a peak reverse voltage of 180V and a maximum forward current of 50 mA. The device dissipates up to 3 W of power and operates at junction temperatures reaching 175°C. Electrical characteristics include a capacitance of 1.2 pF at 40V reverse bias and 100MHz, with a resistance of 750 milliohms at 50mA forward current and 100MHz. It is housed in an SQ-MELF package.

RF Diode Feature Summary

• High power handling capability suitable for RF switching
• Low capacitance for high-frequency signal integrity
• Robust thermal performance for demanding environments

RF Diode Applications

• RF switching circuits
• Attenuator designs
• Phase shifters

RF Diode Procurement Notes

Verify the specific suffix (e.g., R) against the datasheet to confirm packaging and electrical tolerances. Confirm end-of-life status as distribution channels may list obsolete inventory. Ensure the SQ-MELF footprint matches the target PCB design before ordering.

RF Diode Selection Notes

Select this component when high reverse voltage blocking and low RF insertion loss are required. Compare the 1.2 pF capacitance and 750 milliohm resistance against circuit requirements. Verify that the 175°C junction temperature rating meets the system's thermal management goals.

RF Diode Part Context

This part belongs to the L8104 series of RF PIN diodes manufactured by CEL. It is distinct from other CEL products like the UPC8104GR-E1 mixer or general-purpose diodes. The SQ-MELF package provides a compact form factor for surface mount assembly.

RF Diode Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult manufacturer cross-reference guides or evaluate generic PIN diodes with matching 180V reverse voltage and similar capacitance specifications.