LET16060C

Overview

The LET16060C is an N-channel enhancement-mode lateral field-effect RF power transistor from the LdmoST family. It operates at a frequency of 1.6 GHz with a rated voltage of 80 V and a test voltage of 28 V. The device delivers 60 W of output power with a gain of 13.8 dB, drawing 400 mA at test current and supporting a maximum current rating of 12 A. Power dissipation is 100 W, with a maximum operating temperature of +150°C.

Feature Summary

• Common source N-channel enhancement-mode lateral FET design
• Broadband commercial RF power application suitability
• High efficiency operation in wireless communication systems

Applications

• Broadband commercial RF power amplification
• High-frequency wireless communication systems
• RF signal processing circuits

Procurement Notes

Verify component authenticity through authorized STMicroelectronics distributors or certified partners. Confirm package integrity and pin alignment against official mechanical drawings. Check for obsolescence status as availability may be limited. Ensure storage conditions comply with moisture sensitivity levels to prevent degradation before soldering.

Selection Notes

Select this component for applications requiring 60 W output at 1.6 GHz with high gain characteristics. Consider thermal management capabilities due to 100 W power dissipation rating. Evaluate compatibility with 80 V supply constraints and 12 A current limits. Assess PCB layout requirements for RF performance optimization and heat sinking needs.

Part Context

Part of STMicroelectronics' LdmoST family of lateral DMOS transistors designed for RF power applications. This series emphasizes broadband performance and reliability in commercial communications. The LET16060C represents a specific implementation optimized for 1.6 GHz operations within the broader portfolio of RF power solutions.

Replacement Considerations

No public confirmed substitute part numbers are available in verified documentation.