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The Littelfuse LGB18N40ATH is a 400 V, 18 A N-Channel Ignition IGBT designed for high voltage and current switching applications. It features monolithic circuitry integrating ESD protection and inductive coil drivers. Key electrical parameters include a collector-emitter voltage (VCES) of 430 VDC, continuous collector current (IC) of 18 ADC at 25 °C, and pulsed collector current of 50 AAC. The device supports an operating temperature range from -55 °C to +175 °C with a total power dissipation of 115 W at 25 °C case temperature.
Verify the specific datasheet revision date against your design requirements, as specifications are subject to change without notice. Confirm that the D2PAK package dimensions and thermal resistance values align with your PCB layout and heatsinking strategy. Ensure the component meets all necessary environmental approvals for your target market before finalizing procurement.
Select this component when designing circuits requiring robust switching of inductive loads such as ignition coils or fuel injectors. The integrated ESD protection simplifies system design by reducing external component count. Consider the thermal characteristics and safe operating area graphs to ensure reliable operation under varying load conditions and ambient temperatures.
This part belongs to Littelfuse's Power Semiconductor Ignition IGBT series. These devices are engineered specifically for automotive and industrial environments where high reliability and compact size are critical. The LGB18N40ATH utilizes a D2PAK package to provide efficient heat dissipation while maintaining a small footprint suitable for dense PCB layouts.
Consult official Littelfuse documentation for verified substitute part numbers. Cross-referencing should be performed carefully to ensure compatibility with voltage ratings, current capabilities, and package dimensions.
The device has two specified short-circuit withstand times: tsc,1 is 750 µs and tsc,2 is 5.0 ms, depending on the pulse configuration and period as detailed in the datasheet figures.
Yes, it integrates an ESD diode for human body model (8.0 kV) and machine model (800 V) protection, along with logic-level gate drive capability.
The thermal resistance from junction to case (RθJC) is 1.3 °C/W.