LGB8204ATH

LGB8204ATH

  • Description:IGBT 430V 18A D2PAK
  • Series:-

SKU:f61df67dcb2c Category: Brand:

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Product Detailed Parameters

  • Description:IGBT 430V 18A D2PAK
  • Series:-
  • Mfr:IXYS
  • Package:Tape & Reel (TR)
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):430 V
  • Current - Collector (Ic) (Max):18 A
  • Current - Collector Pulsed (Icm):50 A
  • Vce(on) (Max) @ Vge, Ic:2V @ 4.5V, 10A
  • Power - Max:115 W
  • Switching Energy:-
  • Input Type:Logic
  • Gate Charge:-
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:D2PAK
  • Grade:-
  • Qualification:-

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LGB8204ATH

Overview

The LGB8204ATH is a single N-channel IGBT with an integrated diode, manufactured by IXYS. It features a rated voltage of 400V and a continuous collector current of 18A. The device utilizes 5th generation Trench IGBT technology, offering low gate charge and square Reverse Bias Safe Operating Areas (RBSOA). It operates within a junction temperature range of -55°C to +175°C and is housed in a surface-mount TO-263 package.

Feature Summary

  • Single N-channel IGBT with integrated anti-parallel diode
  • Fifth-generation Trench IGBT technology for optimized switching performance
  • Square Reverse Bias Safe Operating Area (RBSOA) for robust operation
  • Low gate charge characteristics suitable for high-frequency applications

Applications

  • Ignition systems
  • Motor control circuits
  • Power supply inverters

Procurement Notes

Verify the component marking GB8204AH against official Littelfuse or IXYS datasheets to confirm authenticity. Check lifecycle status as some distributors list this part as obsolete. Ensure the TO-263 package matches the required thermal and mechanical specifications for the target assembly.

Selection Notes

Select this component for applications requiring a 400V blocking voltage and 18A current handling in a compact surface-mount form factor. Consider the 175°C maximum junction temperature for high-thermal environments. Evaluate the low gate charge benefits for driving efficiency in high-speed switching scenarios compared to standard IGBTs.

Part Context

This part belongs to the IXYS LGB series of power modules, specifically designed for automotive and industrial power electronics. It represents a transition from through-hole to surface-mount packaging while maintaining high reliability standards typical of IXYS power semiconductors.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs before considering alternative manufacturers.

LGB8204ATHLGB8204ATH

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